Structural, Morphological, Compositional, Electrical, and Optical Characterizations of CuZnS Thin Films Prepared using Chemical Bath Deposition Method
DOI:
https://doi.org/10.61343/jcm.v3i02.77Keywords:
CuZnS, Chemical bath deposition, Preparation of thin film, Characterization of thin filmAbstract
The universality, affordability and abundance of solar energy combined with its free and high energy output make it an exceptional renewable energy source. Solar cells play a vital role in converting sunlight into electrical energy. CuZnS has gained significant attention as a potential absorber material for solar cells. In the present work, we report the preliminary results of the preparation of CuZnS thin films using a relatively low-cost Chemical Bath Deposition technique from a precursor solution containing 0.1M concentrations of copper chloride, zinc chloride, and thiourea. Triethanolamine (TEA) is used as the complexing agent, and ammonia is used to control the pH of the solution. The samples were prepared by keeping the pH at 11.6, maintaining the temperature at 80°C, and a deposition time of 1 hour. Structural, morphological, compositional, electrical, and optical analyses of the prepared sample were done. From the SEM analysis grain size calculated is 177 nm. The observed bandgap value was 2.61 eV at a Cu/(Cu+Zn) ratio of 83%. The prepared sample is a p-type semiconductor with a conductivity 1.646X10-3Ω-1cm-1. XRD [Bruker Kappa Apex II], SEM-EDAX [Jeol 6390LA/OXFORD XMX N], Hall effect measurement system [Ecopia HMS 3000s], and UV-Vis Spectrophotometry [JASCO V-670 UV-Vis NIR Spectrophotometer] were used for the characterization of the samples.
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