Structural and Electronic Characteristics of Cubic Half-Heusler Compound AcOF

Authors

  • Shivani Gaur Department of Physics, Govt. SGS PG. College Ganjbasoda (M.P.) India
  • Madhu Sarwan Department of Physics, Barakatullah University bhopal
  • Sadhna Singh Department of Physics, Barkatullah University, Bhopal

DOI:

https://doi.org/10.61343/jcm.v3i01.57

Keywords:

DFT(Density Functional Theory), Structural properties, Electronic properties and Insulator

Abstract

An investigation has been conducted on structural and electronic characteristics of cubic half heusler compound AcOF. The FP-LAPW approach is used in density functional theory (DFT) to conduct the investigation. GGA scheme was applied to verify the structural stability. The lattice parameter, unit cell volume, bulk modulus, and pressure derivative of bulk modulus are among the ground-state characteristics that are calculated. The calculated GGA lattice parameters correlate well with the available data. Band structure, density of state and charge density have been plotted. Electronic band structure confirms AcOF as an insulator having large band gap.

References

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Madhu Sarwan, V.Abdul Shukoor and Sadhna Singh, “Distinctive Features of Semiconducting and Brittle Half-Heusler Alloys; LiXP (X=Zn, Cd)”, Book, Mathematics in Computational Science and Engineering. Publisher: Wiley online libiarary,2022, https://doi.org/10.1002/9781119777557.ch8.

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Published

2025-03-25

How to Cite

1.
Gaur S, Madhu Sarwan, Singh S. Structural and Electronic Characteristics of Cubic Half-Heusler Compound AcOF. J. Cond. Matt. [Internet]. 2025 Mar. 25 [cited 2025 Apr. 4];3(01):27-9. Available from: https://jcm.thecmrs.in/index.php/j/article/view/57

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Research Article

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