Tin Sulfide Nanoparticles as a p-Type Semiconductor Material: Synthesis and Characterization

Abstract

In this paper, the synthesis and characterization of tin sulfide as a p-type semiconductor material are reported. The low-cost, straightforward use of the transparent conductive tin sulfide technique of chemical bath deposition. The pH levels (7, 8, 9, and 10) were changed while maintaining a fixed bath temperature to create the tin sulfide nanoparticles. XRD, FTIR, and UV-visible were all used to look at the tin sulfide nanoparticles used in this study and learn about their structure and how they move light. Created via chemical bath deposition at various pH values to examine how pH affects the characteristics of the nanoparticles. Tin sulfide structural analysis and crystalline size are revealed by its X-ray diffraction pattern, and both are shown to be affected by changes in pH. Correspondingly, for pH 7, pH 8, pH 9, and pH 10. Tauc plot was used to determine the SnS nanoparticles' optical bandgap energies. From pH 7 to pH 10, it was noticed that the size of the SnS nanoparticle crystallite decreased. It was shown that the quantum confinement effect makes the band gap energy of SnS nanoparticles go up as the sizes of the crystallites get smaller. FTIR spectra confirm the dominating bond stretching of sulfur (S) and tin (Sn) atoms. The SnS nanoparticles generated with enhanced optical characteristics might be employed as an absorber layer in the development of SnS-based heterojunction solar cells, according to optical characterization, which demonstrates that the direct energy band gap (Eg), which is seen to rise with increasing pH values, is increasing with pH values.