Quantum Transport Properties of Monolayer MoS2, WS2, and Black Phosphorus: A Comparative Study

Authors

  • Sandeep Kumar
  • Surender Pratap

DOI:

https://doi.org/10.61343/jcm.v1i02.20

Keywords:

Transport properties, FET model, Transfer characteristics, Output characteristics

Abstract

A comparative study of the performance analysis of dual-gate ballistic monolayer Molybdenum disulfide (MoS2), tungsten disulfide (WS2), and black phosphorus (BP) field-effect transistors (FETs) is presented. A thorough investigation of output and transfer characteristics infers that WS2 FET exhibits better performance as compared to MoS2 and BP. Furthermore, among all three FETs (MoS2, WS2, and BP), the WS2 based FET has a higher carrier velocity. However, variation of gate capacitance (CG) with gate voltage (VG) reflects a very good electrostatic gate control of MoS2 FET due to higher surface charge accumulation. Except for CG, the overall performance of WS2 based FET is better than MoS2 and BP.

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Published

2023-12-01

How to Cite

1.
Kumar S, Surender Pratap. Quantum Transport Properties of Monolayer MoS2, WS2, and Black Phosphorus: A Comparative Study. J. Cond. Matt. [Internet]. 2023 Dec. 1 [cited 2024 May 29];1(02):27-31. Available from: https://jcm.thecmrs.in/index.php/j/article/view/20

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