Quantum Transport Properties of Monolayer MoS2, WS2, and Black Phosphorus: A Comparative Study

Sandeep  Kumar; Surender Pratap

doi:10.61343/jcm.v1i02.20

Authors

Sandeep Kumar
Surender Pratap

DOI:

https://doi.org/10.61343/jcm.v1i02.20

Keywords:

Transport properties, FET model, Transfer characteristics, Output characteristics

Abstract

A comparative study of the performance analysis of dual-gate ballistic monolayer Molybdenum disulfide (MoS₂), tungsten disulfide (WS₂), and black phosphorus (BP) field-effect transistors (FETs) is presented. A thorough investigation of output and transfer characteristics infers that WS₂ FET exhibits better performance as compared to MoS₂ and BP. Furthermore, among all three FETs (MoS₂, WS₂, and BP), the WS₂ based FET has a higher carrier velocity. However, variation of gate capacitance (C_G) with gate voltage (V_G) reflects a very good electrostatic gate control of MoS₂ FET due to higher surface charge accumulation. Except for C_G, the overall performance of WS₂ based FET is better than MoS₂ and BP.

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