An Enhanced Simulative Study on SWIRGs of In0.68Al0.08Ga0.24As/InP Lasing Nanoscale Heterostructure
DOI:
https://doi.org/10.61343/jcm.v3i01.123Keywords:
Es-Hs quasi-Fermi sub-band energy levels, SWIR-gain, SWIR-differential gain, SWIR-loss, Transverse bi-modesAbstract
The foremost emphasis of this foundational research letter has been given on analytical investigation of an enhanced simulative study on shortwave infrared gains (SWIRGs) of In0.68Al0.08Ga0.24As/InP lasing nanoscale heterostructure for fiber optic cable communication applications under transverse electric and magnetic bi-modes at 300K. In the starting of this work, taking into account recent and emerging computational technology, an enhanced and improved effective mass theory for single and multi-sub-bands has been utilized to enumerate the appropriate SWIR gain parameters as well as electrons-holes (Es-Hs) levels of quasi-Fermi energies. Under advanced simulation, first of all, the salient computational performances of Es-Hs levels of quasi-Fermi sub-band energies versus injected carriers (1018 cm-3) at 300K have been analysed simulatively. Next, electric and magnetic transverse bi-modes induced several spectral performances of SWIR-gain with wavelengths of photons have also been investigated analytically. In spite of this, the prominent performances of SWIR-differential gain (10-16cm2) with injected carriers (1018 cm-3) under transverse electric and magnetic bi-modes at 300K have been analyzed dominantly. Throughout the results, the peak intensities of SWIR-gain are achieved at wavelengths 1330 nm and 1550 nm corresponding to two crests of SWIR-spectra respectively under transverse bi-modes. Consequently, this emitted SWIR light gain by In0.68Al0.08Ga0.24As/InP heterogeneous nanostructure of wavelengths ~ 1330 nm and 1550 nm can be substantially utilized in the applications of fiber optic cable communications in the transmission of SWIR-signals through the modern process of total internal reflection with minimal attenuations of SWIR-signals (in dB × km-1) owing to lowest fiber dispersions and fiber absorptions.
References
P. A. Alvi, Pyare Lal, S. Dalela, M. J. Siddiqui, "An Extensive Study on Simple and GRIN SCH based In0.71Ga0.21Al0.08As/InP Lasing heterostructure", Physica Scripta, 85, 035402 2012.
P. A. Alvi, Pyare Lal, Rashmi Yadav, Shobhna Dixit, S. Dalela, “Modal gain characteristics of GRIN-InGaAlAs/InP lasing nano -heterostructures”, Superlattices and Microstructures, Vol. 61, pp. 1-12, 2013.
A. Ramam and S. J. Chua, “Features of InGaAlAs/InP heterostructures”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 16, 565, 1998.
D A Rybalko, I S Polukhin et al, “Model of mode-locked quantum-well semiconductor laser based on InGaAs/InGaAlAs/InP heterostructure”, Journal of Physics: Conference Series 741, 012079, 2016.
Pyare Lal, Garima Bhardwaj, Sandhya Kattayat, P.A. Alvi1, “Tunable Anti-Guiding Factor and Optical Gain of InGaAlAs/InP Nano-Heterostructure under Internal Strain”, Journal of Nano- and Electronic Physics, Vol. 12 No 2, 02002(3pp), 2020.
Pyare Lal, Sapna Gupta, PA Alvi, “G-J study for GRIN InGaAlAs/InP lasing nano-heterostructures”, AIP Conference Proceedings, Vol. 1536, Issue-1, pp-53-54, 2013.
Sandra R. Selmic, Tso-Min Chou, JiehPing Sih, Jay B. Kirk, Art Mantie, Jerome K. Butler, David Bour, and Gary A. Evans, “Design and Characterization of 1.3-µm AlGaInAs–InP Multiple-Quantum-Well Lasers”, IEEE Journal on Selected Topics in Quantum Electronics, Vol. 7, No. 2, March/April 2001.
S. Yoshitomi, K. Yamanaka, Y. Goto, Y. Yokomura, N. Nishiyama, and S. Arai, “Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C”, Japanese Journal of Applied Physics 59, 042003, 2020.
Joachim Piprek, J. Kenton White, and Anthony J. SpringThorpe “What Limits the Maximum Output Power of Long-Wavelength AlGaInAs/InP Laser Diodes?”, IEEE Journal of Quantum Electronics, Vol. 38, No. 9, September 2002.
Weng W. Chow, Zeyu Zhang, Justin C. Norman, Songtao Liu, and John E. Bowers, “On quantum-dot lasing at gain peak with linewidth enhancement factor αH = 0”, APL Photon. 5,026101, 2020.
Pyare Lal and P. A. Alvi, “Strain induced gain optimization in type-I InGaAlAs/InP nanoscale-heterostructure”, AIP Conference Proceedings 2220, 020060, 2020.
L. Ya. Karachinsky , I. I. Novikov , A. V. Babichev , A. G. Gladyshev , E. S. Kolodeznyi, S. S. Rochas , A. S. Kurochkin , Yu. K. Bobretsova , A. A. Klimov , D. V. Denisov , K. O. Voropaev , A. S., Ionov , V. E. Bougrov , and A. Yu. Egorov “Optical Gain in Laser Heterostructures with anActive Area Based on an InGaAs/InGaAlAs Superlattice”, ISSN 0030-400X, Optics and Spectroscopy, 2019, Vol. 127, No. 6, pp. 1053–1056, 2019.
S. L. Chuang, Physics of optoelectronic devices, Wiley, New York, 1995.
C. Henry, “Theory of linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18, 259–264, 1982.
H. Vahala and A. Yariv, “Semiclassical theory of noise in semiconductor lasers-Part II”, IEEE J. Quantum Electron. 19, 1102–1109, 1983.
Pyare Lal, Rashmi Yadav, Meha Sharma, F. Rahman, S. Dalela and P. A. Alvi, “Qualitative analysis of gain spectra of InGaAlAs/InP lasing nano-heterostructure”, International Journal of Modern Physics B, Vol. 28, No. 29, 1450206, 2014.
Pyare Lal, "An Investigation of Optical Gain of Nanomaterial AlGaAsIn/InP under CTLSs in Optical Communications", Journal of Atomic, Molecular, Condensed Matter and Nanophysics 7(3), 189-195, 2020.
Pyare Lal, "Gain Enhancement Study of Nanomaterial AlGaAs/GaAs under GRINLs", Journal of International Academy of Physical Sciences, Vol. 24, No. 04, pp.485-491, 2020.
Pyare Lal, "An Investigative Study on Growth of Light of AlGaAs/ GaAs in Nanotechnological Life Sciences", Conference Proceeding NSCTLS-2021, ISSN: 2582-3310, Vol.2, Issue I, pp 23-32, June 2021.
G Bhardwaj, Pyare Lal, V Mishra, P A Alvi, "Numerical simulation of optical properties of compressively strained GRIN- InGaAlAs/ InP type-I nano-heterostructure", Material Today, Proceedings, 44, 4847-4849, 2021.
Pyare Lal, "An Exploratory Study on SWIRL of AlGaAs/GaAs in Advanced Bio based Nanotechnological Systems", Journal of Advanced Materials and Nano Systems: Theory and Experiment-Part 2, Issue 2, Pages 18-33, Bentham Science Publishers, 30 Sep 2022.
Pyare Lal and P A Alvi, "A Simulative Study on Electro-Optic Characteristics of InAlGaAs/InP for Fiber Optic-based Communications under Nanoscale Well Thickness Layers", Journal of Photonic Materials: Recent Advances and Emerging Applications, Issue 2, Pages 160, Bentham Science Publishers, 24 Jan 2023.
Pyare Lal, "An Advanced Study on Temperature Influenced Electro-optic-properties of In0.73Al0.07Ga0.20As/InP in Fiber-optic Communications under Bi-modes", Journal of Intelligent Technologies for Scientific Research and Engineering, Volume 1, Pages 45-59, Bentham Science Publishers, July 2023.

Downloads
Published
How to Cite
Issue
Section
Categories
License
Copyright (c) 2025 Dr. Pyare Lal

This work is licensed under a Creative Commons Attribution 4.0 International License.
1. All articles published in this journal are licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
2. Article are open access and can be downloaded and cited.