Characterization and Analysis of Europium Sulphide (EuS) Thin Films
DOI:
https://doi.org/10.61343/jcm.v3i01.114Keywords:
Europium sulfide, spray pyrolysis, X-ray diffraction, substrate temperature, crystallinity, semiconductor devicesAbstract
Deposition of Europium Sulphide (EuS) thin films on bare glass substrates via spray pyrolysis method in an optimized aqueous bath environment. Structural characterization was carried out to determine the optimal deposition conditions. The results indicated that the optimum temperature for depositing high-quality EuS thin films is 623 K. At this temperature, the films exhibited excellent crystallinity, as evidenced by sharp X-ray diffraction (XRD) peaks. This confirms that 623 K is ideal for forming well-crystallized EuS thin films. These findings are significant for applications requiring high-quality crystalline structures and demonstrate that the spray pyrolysis method, when operated under optimized conditions, can effectively produce EuS thin films with superior structural properties.
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