Tin Sulfide Nanoparticles as a p-Type Semiconductor Material: Synthesis and Characterization
Ansari M1*, Sharma R2
DOI:10.61343/jcm.v1i02.42
1* Mohd Zubair Ansari, Physics Department, National Institute Of Technology Srinagar Hazratbal, Srinagar Kashmir, JK, India.
2 Raunak Sharma, Physics Department, National Institute of Technology Srinagar Hazratbal, Srinagar Kashmir, JK, India.
In this paper, the synthesis and characterization of tin sulfide as a p-type semiconductor material are reported. The low-cost, straightforward uses of transparent conductive tin sulfide technique of chemical bath deposition. The pH levels (7, 8, 9, and 10) were changed while maintaining a fixed bath temperature to create the tin sulfide nanoparticles. XRD, FTIR, and UV-visible have all been used to determine the structural and optical characteristics of tin sulfide nanoparticles in this study. Created via chemical bath deposition at various pH values to examine how pH affects the characteristics of the nanoparticles. Tin Sulfide's structural analysis and crystalline size are revealed by its X-ray diffraction pattern, and both are shown to be affected by changes in pH. Correspondingly, for pH 7, pH 8, pH 9, and pH 10. A Tauc plot was used to determine the SnS nanoparticles' optical bandgap energies. From pH 7 to pH 10, it was noticed that the size of the SnS nanoparticle crystallite decreased. It was shown that the quantum confinement effect causes the band gap energy of SnS nanoparticles to grow when crystallite sizes decrease. Sulfur (S) and tin (Sn) atoms' dominating bond stretching is confirmed by FTIR spectra. The SnS nanoparticles generated with enhanced optical characteristics might be employed as an absorber layer in the development of SnS-based heterojunction solar cells, according to optical characterization, which demonstrates that the direct energy band gap (Eg), which is seen to rise with increasing pH value, is increasing with pH values.
Keywords: Band gap, Chemical bath deposition, Absorbance
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, , Physics Department, National Institute Of Technology Srinagar Hazratbal, Srinagar Kashmir, JK, India.Ansari M, Sharma R, Tin Sulfide Nanoparticles as a p-Type Semiconductor Material: Synthesis and Characterization. J.Con.Ma. 2023;1(2):99-104. Available From https://jcm.thecmrs.in/index.php/j/article/view/42 |